Spin-polarized transport in a full magnetic pn tunnel junction

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URI: http://hdl.handle.net/10347/17700
ISSN: 0003-6951
E-ISSN: 1077-3118
DOI: 10.1063/1.3586770

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2011

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AIP Publishing
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Simulations of the tunneling current as a function of voltage and temperature for a Zener diode where both sides are ferromagnetic have been performed. The current is evaluated as a function of the applied bias, the magnetization, and the temperature on the diode. The tunneling magnetoresistance is also analyzed. Mn doped GaAs parameters were used to simulate a highly asymmetric doped diode, which leads to a large difference on the magnetization values between the p and n sides

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Comesaña, E., Aldegunde, M., & Garcia-Loureiro, A. (2011). Spin-polarized transport in a full magnetic pn tunnel junction. Applied Physics Letters, 98(19), 192507. doi: 10.1063/1.3586770

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This work was supported by Spanish Government Grant Nos. TIN2007-67537-C03-01 and TEC2010-17320 and by Xunta de Galicia Grant Nos. DXIDI09TIC001CT and INCITE08PXIB206094PR

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© 2011 American Institute of Physics

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Centro de Investigación en Tecnoloxías Intelixentes da USC (CiTIUS)
Electrónica e Computación