Spin-polarized transport in a full magnetic pn tunnel junction

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dc.contributor.affiliationUniversidade de Santiago de Compostela. Centro de Investigación en Tecnoloxías da Informacióngl
dc.contributor.affiliationUniversidade de Santiago de Compostela. Departamento de Electrónica e Computacióngl
dc.contributor.areaÁrea de Enxeñaría e Arquitectura
dc.contributor.authorComesaña Figueroa, Enrique
dc.contributor.authorAldegunde Villar, Manuel Alejo
dc.contributor.authorGarcía Loureiro, Antonio Jesús
dc.date.accessioned2018-11-13T08:43:54Z
dc.date.available2018-11-13T08:43:54Z
dc.date.issued2011
dc.description.abstractSimulations of the tunneling current as a function of voltage and temperature for a Zener diode where both sides are ferromagnetic have been performed. The current is evaluated as a function of the applied bias, the magnetization, and the temperature on the diode. The tunneling magnetoresistance is also analyzed. Mn doped GaAs parameters were used to simulate a highly asymmetric doped diode, which leads to a large difference on the magnetization values between the p and n sidesgl
dc.description.peerreviewedSIgl
dc.description.sponsorshipThis work was supported by Spanish Government Grant Nos. TIN2007-67537-C03-01 and TEC2010-17320 and by Xunta de Galicia Grant Nos. DXIDI09TIC001CT and INCITE08PXIB206094PRgl
dc.identifier.citationComesaña, E., Aldegunde, M., & Garcia-Loureiro, A. (2011). Spin-polarized transport in a full magnetic pn tunnel junction. Applied Physics Letters, 98(19), 192507. doi: 10.1063/1.3586770gl
dc.identifier.doi10.1063/1.3586770
dc.identifier.essn1077-3118
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/10347/17700
dc.language.isoenggl
dc.publisherAIP Publishinggl
dc.relation.projectIDinfo:eu-repo/grantAgreement/MEC/Plan Nacional de I+D+i 2004-2007/TIN2007-67537-C03-01/ES/SOPORTE HARDWARE Y SOFTWARE PARA COMPUTACION DE ALTAS PRESTACIONES – I
dc.relation.projectIDinfo:eu-repo/grantAgreement/MICINN/Plan Nacional de I+D+i 2008-2011/TEC2010-17320/ES/DESARROLLO DE HERRAMIENTAS PARA EL MODELADO Y SIMULACION DE DISPOSITIVOS SEMICONDUCTORES AVANZADOS: APLICACION AL ESTUDIO DE FLUCTUACIONES DE PARAMETROS INTRINSECOS
dc.relation.publisherversionhttps://doi.org/10.1063/1.3586770gl
dc.rights© 2011 American Institute of Physicsgl
dc.rights.accessRightsopen accessgl
dc.titleSpin-polarized transport in a full magnetic pn tunnel junctiongl
dc.typejournal articlegl
dc.type.hasVersionVoRgl
dspace.entity.typePublication
relation.isAuthorOfPublication3a7c31d3-5d61-4414-a6ae-b129a353f543
relation.isAuthorOfPublication46ce4159-d535-4c98-a4d1-710803b67e89
relation.isAuthorOfPublication7c94bda5-3924-4484-9121-f327b8d2962c
relation.isAuthorOfPublication.latestForDiscovery3a7c31d3-5d61-4414-a6ae-b129a353f543

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