RT Journal Article
T1 Spin-polarized transport in a full magnetic pn tunnel junction
A1 Comesaña Figueroa, Enrique
A1 Aldegunde Villar, Manuel Alejo
A1 García Loureiro, Antonio Jesús
AB Simulations of the tunneling current as a function of voltage and temperature for a Zener diodewhere both sides are ferromagnetic have been performed. The current is evaluated as a functionof the applied bias, the magnetization, and the temperature on the diode. The tunnelingmagnetoresistance is also analyzed. Mn doped GaAs parameters were used to simulate a highlyasymmetric doped diode, which leads to a large difference on the magnetization values between thep and n sides
PB AIP Publishing
SN 0003-6951
YR 2011
FD 2011
LK http://hdl.handle.net/10347/17700
UL http://hdl.handle.net/10347/17700
LA eng
NO Comesaña, E., Aldegunde, M., & Garcia-Loureiro, A. (2011). Spin-polarized transport in a full magnetic pn tunnel junction. Applied Physics Letters, 98(19), 192507. doi: 10.1063/1.3586770
NO This work was supported by Spanish Government Grant Nos. TIN2007-67537-C03-01 and TEC2010-17320 and by Xunta de Galicia Grant Nos. DXIDI09TIC001CT and INCITE08PXIB206094PR
DS Minerva
RD 24 abr 2026