Epitaxial stabilization of pulsed laser deposited Srn+1IrnO3n+1 thin films: Entangled effect of growth dynamics and strain

dc.contributor.affiliationUniversidade de Santiago de Compostela. Centro de Investigación en Química Biolóxica e Materiais Molecularesgl
dc.contributor.affiliationUniversidade de Santiago de Compostela. Departamento de Química Físicagl
dc.contributor.authorGutiérrez Llorente, Araceli
dc.contributor.authorIglesias Bernardo, Lucía
dc.contributor.authorRodríguez-González, Benito
dc.contributor.authorRivadulla Fernández, José Francisco
dc.date.accessioned2020-05-15T09:08:13Z
dc.date.available2020-05-15T09:08:13Z
dc.date.issued2018
dc.description.abstractThe subtle balance of electronic correlations, crystal field splitting, and spin–orbit coupling in layered Ir4+ oxides can give rise to novel electronic and magnetic phases. Experimental progress in this field relies on the synthesis of epitaxial films of these oxides. However, the growth of layered iridates with excellent structural quality is a great experimental challenge. Here we selectively grow high quality single-phase films of Sr2IrO4, Sr3Ir2O7, and SrIrO3 on various substrates from a single Sr3Ir2O7 target by tuning background oxygen pressure and epitaxial strain. We demonstrate a complex interplay between growth dynamics and strain during thin film deposition. Such interplay leads to the stabilization of different phases in films grown on different substrates under identical growth conditions, which cannot be explained by a simple kinetic model. We further investigate the thermoelectric properties of the three phases and propose that weak localization is responsible for the low temperature activated resistivity observed in SrIrO3 under compressive straingl
dc.description.peerreviewedSIgl
dc.description.sponsorshipThis work has received financial support from Ministerio de Economía y Competitividad (Spain) under Project No. MAT2016–80762–R, Xunta de Galicia (Centro singular de investigación de Galicia accreditation 2016–2019, No. ED431G/09), and the European Union (European Regional Development Fund—ERDF)gl
dc.identifier.citationGutiérrez-Llorente, A., Iglesias, L., Rodríguez-González, B. and Rivadulla, F., 2018. Epitaxial stabilization of pulsed laser deposited Srn+1IrnO3n+1 thin films: Entangled effect of growth dynamics and strain. APL Materials, 6(9), p.091101gl
dc.identifier.doi10.1063/1.5042836
dc.identifier.issn2166-532X
dc.identifier.urihttp://hdl.handle.net/10347/22328
dc.language.isoenggl
dc.publisherAIP Publishinggl
dc.relation.publisherversionhttps://doi.org/10.1063/1.5042836gl
dc.rights© 2018 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/)gl
dc.rights.accessRightsopen accessgl
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/
dc.titleEpitaxial stabilization of pulsed laser deposited Srn+1IrnO3n+1 thin films: Entangled effect of growth dynamics and straingl
dc.typejournal articlegl
dc.type.hasVersionVoRgl
dspace.entity.typePublication
relation.isAuthorOfPublication3f9dd489-0c71-4164-a2b2-38956d3b7ea1
relation.isAuthorOfPublication.latestForDiscovery3f9dd489-0c71-4164-a2b2-38956d3b7ea1

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