Epitaxial stabilization of pulsed laser deposited Srn+1IrnO3n+1 thin films: Entangled effect of growth dynamics and strain
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AIP Publishing
Abstract
The subtle balance of electronic correlations, crystal field splitting, and spin–orbit
coupling in layered Ir4+ oxides can give rise to novel electronic and magnetic phases.
Experimental progress in this field relies on the synthesis of epitaxial films of these
oxides. However, the growth of layered iridates with excellent structural quality is
a great experimental challenge. Here we selectively grow high quality single-phase
films of Sr2IrO4, Sr3Ir2O7, and SrIrO3 on various substrates from a single Sr3Ir2O7
target by tuning background oxygen pressure and epitaxial strain. We demonstrate
a complex interplay between growth dynamics and strain during thin film deposition. Such interplay leads to the stabilization of different phases in films grown on
different substrates under identical growth conditions, which cannot be explained by
a simple kinetic model. We further investigate the thermoelectric properties of the
three phases and propose that weak localization is responsible for the low temperature
activated resistivity observed in SrIrO3 under compressive strain
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Bibliographic citation
Gutiérrez-Llorente, A., Iglesias, L., Rodríguez-González, B. and Rivadulla, F., 2018. Epitaxial stabilization of pulsed laser deposited Srn+1IrnO3n+1 thin films: Entangled effect of growth dynamics and strain. APL Materials, 6(9), p.091101
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https://doi.org/10.1063/1.5042836Sponsors
This work has received financial support from Ministerio de Economía y Competitividad (Spain) under Project No. MAT2016–80762–R, Xunta de Galicia (Centro singular de investigación de Galicia accreditation 2016–2019, No. ED431G/09), and the European Union (European Regional Development Fund—ERDF)
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© 2018 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/)








