Blanco Filgueira, BeatrizLópez Martínez, PaulaRoldán Aranda, Juan Bautista2019-03-122019-03-122013-08-20Beatriz Blanco-Filgueira, Paula López Martínez, and Juan Bautista Roldán Aranda (2013) A closedform and explicit analytical model for crosstalk in CMOS photodiodes. IEEE TRANSACTIONS ON ELECTRON DEVICES, 60(10), 3459-3464. Doi: 10.1109/TED.2013.22767480018-9383http://hdl.handle.net/10347/18339A closed-form and explicit 2-D analytical model for crosstalk(CTK) effects in p-n + CMOS photodiodes for pixel design optimization has been developed in this paper. This model complements and extends a previous development describing the photocurrent because of the active area illumination along with the lateral depletion region and lateral components owing to the diffused photocarriers from the surroundings of the junction. The model has very few fitting parameters because it is physically based. Similarly, it can be of great use for CMOS image sensors designers, especially to fulfill high resolution and small area requirements by pixel size reduction. The model was validated extensively through device simulations with ATLAS and experimental data, and describes the CTK dependencies on light conditions and physical, geometrical, and process parameterseng© 2013 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other worksCrosstalk (CTK)ModelingPhotodiodes (PDs)Simulationjournal article10.1109/TED.2013.2276748open access