Faílde Balea, DanielBaldomir Fernández, Daniel2021-07-292021-07-292021Faílde, D., Baldomir, D. Emergent topological fields and relativistic phonons within the thermoelectricity in topological insulators. Sci Rep 11, 14335 (2021). https://doi.org/10.1038/s41598-021-93667-xhttp://hdl.handle.net/10347/26645Topological edge states are predicted to be responsible for the high efficient thermoelectric response of topological insulators, currently the best thermoelectric materials. However, to explain their figure of merit the coexistence of topological electrons, entropy and phonons can not be considered independently. In a background that puts together electrodynamics and topology, through an expression for the topological intrinsic field, we treat relativistic phonons within the topological surface showing their ability to modulate the Berry curvature of the bands and then playing a fundamental role in the thermoelectric effect. Finally, we show how the topological insulators under such relativistic thermal excitations keep time reversal symmetry allowing the observation of high figures of merit at high temperatures. The emergence of this new intrinsic topological field and other constraints are suitable to have experimental consequences opening new possibilities of improving the efficiency of this topological effect for their based technologyeng© The Author(s) 2021. Open Access. This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/Atribución 4.0 Internacionalhttp://creativecommons.org/licenses/by/4.0/Surfaces, interfaces and thin filmsThermoelectricsTopological insulatorsjournal article10.1038/s41598-021-93667-x2045-2322open access