Outes, CeliaFernández Fernández, EduardoSeoane Iglesias, NataliaAlmonacid, FlorenciaGarcía Loureiro, Antonio Jesús2025-01-202025-01-202021-10-191558-0563https://hdl.handle.net/10347/38771High power laser transmission is being intensively researched as a potential solution to transfer power to remote systems, being the power converter (PC) one of the main limiting factor to improve the system efficiency ( η ). Current PCs are mostly horizontal structures in which the η heavily decreases at large input power. In this work, we propose a novel GaAs-based vertical-tunnel-junction (VTJ) PC suitable for ultra-high (UH) input power density (Pin). This structure does not suffer from η degradation at high Pin because it is designed to have low current density, high output voltage and reduced series resistance (~ 2 orders of magnitude lower than the state-of-the-art PCs). We have demonstrated increasing η with Pin, reaching values higher than 76% at 3000 W⋅ cm−2. This vertical-based architecture enables a new set of potential applications for wireless PC to power remote systems with η exceeding today’ s state-of-the-art PC designs.engAttribution 4.0 Internationalhttp://creativecommons.org/licenses/by/4.0/Laser power transferPower converterTunnel-junctionVertical- structureGaAsSeries resistance330609 Transmisión y distribuciónGaAs Vertical-Tunnel-Junction Converter for Ultra-High Laser Power Transferjournal article10.1109/LED.2021.3121501open access