Seoane Iglesias, NataliaIndalecio Fernández, GuillermoAldegunde, M.Nagy, DanielElmessary, M. A.García Loureiro, Antonio JesúsKalna, K.2025-01-232025-01-232016-01-27Seoane, N., Indalecio, G., Aldegunde, M., Nagy, D., Elmessary, M. A., García-Loureiro, A., Kalna, K. (2016). Comparison of Fin-Edge Roughness and Metal Grain Work Function Variability in InGaAs and Si FinFETs. "IEEE Transactions on Electron Devices”, vol. 63, no. 3, pp. 1209-1216, doi: 10.1109/TED.2016.25169210018-9383https://hdl.handle.net/10347/38930The fin-edge roughness (FER) and the TiN metal grain work function (MGW)-induced variability affecting OFF and ON device characteristics are studied and compared between a 10.4-nm gate length In0.53Ga0.47As FinFET and a 10.7-nm gate length Si FinFET. We have analyzed the impact of variability by assessing five figures of merit (threshold voltage, subthreshold slope, OFF-current, drain-induced-barrier-lowering, and ON-current) using the two state-of-the-art in-house-build 3-D simulation tools based on the finite-element method. Quantum-corrected 3-D drift-diffusion simulations are employed for variability studies in the subthreshold region while, in the ON-region, we use quantum-corrected 3-D ensemble Monte Carlo simulations. The In0.53Ga0.47As FinFET is more resilient to the FER and MGW variability in the subthreshold compared with the Si FinFET due to a stronger quantum carrier confinement present in the In0.53Ga0.47As channel. However, the ON-current variability is between 1.1 and 2.2 times larger for the In0.53Ga0.47As FinFET than for the Si counterpart, respectively.engCopyright © 2016, IEEEAttribution 4.0 Internationalhttp://creativecommons.org/licenses/by/4.0/III-V materialsFin-edge roughness (FER)FinFETsGate work function variabilityIntrinsic parameter fluctuationsSi2203 Electrónicajournal article10.1109/TED.2016.25169211557-9646open access