Elhamdi, I.Souissi, H.Kammoun, H.Dhahri, E.Pina, J.Costa, B.F.O.López Lago, María Elena2025-10-272025-10-272024-04-16Elhamdi, I., Souissi, H., Kammoun, S., Dhahri, E., Pina, J., Costa, B. F. O. andLópez-Lago, E. (2024). Comprehensive characterization and optoelectronic significance of Ho3+ and Cr3+ Co-doped ZnAl2O4 spinels. Dalton Trans., 2024,53, 7721-7733https://hdl.handle.net/10347/43415The spinels ZnAl1.99−xHoxCr0.01O4 (with x = 0 and 0.001) were synthesized using a solid-state method, and various techniques were employed for their characterization. X-ray diffraction (XRD) analysis confirmed a cubic spinel structure with the Fd[3 with combining macron]m space group for both spinels. The morphology and homogeneity of the chemical composition were determined using scanning electron microscopy (SEM) and energy dispersive X-ray analysis. Raman and infrared vibrational spectroscopy techniques were also employed for analysis. The optical band gap (Eg) was determined from UV/vis absorption spectra, and the direct transition behavior was confirmed by Tauc's law. The observed large disorder and defect concentration are attributed to the presence of Cr3+ and Ho3+ ions, explaining this behavior. The electron paramagnetic resonance (EPR) measurement presented different types of traps. Room temperature absorption spectra exhibited multiple peaks corresponding to the 3d–3d and 4f–4f transitions of Cr3+ and Ho3+ ions. The results obtained validate the significance of our compounds in optoelectronic device applications.engSpinel oxideRamenFTIRUV/Vis spectroscopyOptical band-gapEPR measurementjournal article10.1039/D4DT00198B1477-9234open access