Seoane Iglesias, NataliaIndalecio Fernández, GuillermoComesaña Figueroa, EnriqueGarcía Loureiro, Antonio JesúsAldegunde Villar, Manuel AlejoKalna, Karol2025-01-232025-01-232013-01-09N. Seoane, G. Indalecio, E. Comesana, A. J. Garcia-Loureiro, M. Aldegunde and K. Kalna, "Three-dimensional simulations of random dopant and metal-gate workfunction variability in an In0.53Ga0.47As GAA MOSFET," in IEEE Electron Device Letters, vol. 34, no. 2, pp. 205-207, Feb. 2013, doi: 10.1109/LED.2012.22303131558-0563https://hdl.handle.net/10347/38950We investigate the impacts of random dopant (RD) and gate workfunction variability on the subthreshold characteristics of a 50-nm-gate-length inversion-mode gate-all-around In0.53Ga0.47As MOSFET using a 3-D finite-element quantum-corrected drift-diffusion device simulator calibrated to experimental data. We have studied threshold voltage, off-current, and subthreshold slope variations. The workfunction variations on the subthreshold characteristics dominate and decrease with the reduction in grain diameter. The simulated grain diameters of 10, 7, and 5 nm exhibit threshold voltage standard deviations of 52, 41, and 27 mV, respectively. These values are larger than those observed in TiN-metal-gate Si FinFETs for a similar gate length. The impact of RD fluctuations is negligible when compared with bulk Si MOSFETs, giving a threshold voltage spread of only 6 mV.eng© 2013 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.Density gradient (DG)Drift–diffusion (DD)Gate-all-around (GAA) MOSFETsIII–V materialsIntrinsic parameter fluctuations3307 Tecnología electrónicajournal article10.1109/LED.2012.2230313open access