Comesaña Figueroa, EnriqueAldegunde Villar, Manuel AlejoGarcía Loureiro, Antonio Jesús2018-11-132018-11-132011Comesaña, E., Aldegunde, M., & Garcia-Loureiro, A. (2011). Spin-polarized transport in a full magnetic pn tunnel junction. Applied Physics Letters, 98(19), 192507. doi: 10.1063/1.35867700003-6951http://hdl.handle.net/10347/17700Simulations of the tunneling current as a function of voltage and temperature for a Zener diode where both sides are ferromagnetic have been performed. The current is evaluated as a function of the applied bias, the magnetization, and the temperature on the diode. The tunneling magnetoresistance is also analyzed. Mn doped GaAs parameters were used to simulate a highly asymmetric doped diode, which leads to a large difference on the magnetization values between the p and n sideseng© 2011 American Institute of Physicsjournal article10.1063/1.35867701077-3118open access