Seoane Iglesias, NataliaNagy, DanielIndalecio Fernández, GuillermoEspiñeira Deus, GabrielKalna, KarolGarcía Loureiro, Antonio Jesús2020-04-072020-04-072019Seoane, N.; Nagy, D.; Indalecio, G.; Espiñeira, G.; Kalna, K.; García-Loureiro, A. A Multi-Method Simulation Toolbox to Study Performance and Variability of Nanowire FETs. Materials 2019, 12, 2391http://hdl.handle.net/10347/21248An in-house-built three-dimensional multi-method semi-classical/classical toolbox has been developed to characterise the performance, scalability, and variability of state-of-the-art semiconductor devices. To demonstrate capabilities of the toolbox, a 10 nm gate length Si gate-all-around field-effect transistor is selected as a benchmark device. The device exhibits an off-current ( IOFF ) of 0.03 μ A/ μ m, and an on-current ( ION ) of 1770 μ A/ μ m, with the ION/IOFF ratio 6.63×104 , a value 27% larger than that of a 10.7 nm gate length Si FinFET. The device SS is 71 mV/dec, no far from the ideal limit of 60 mV/dec. The threshold voltage standard deviation due to statistical combination of four sources of variability (line- and gate-edge roughness, metal grain granularity, and random dopants) is 55.5 mV, a value noticeably larger than that of the equivalent FinFET (30 mV). Finally, using a fluctuation sensitivity map, we establish which regions of the device are the most sensitive to the line-edge roughness and the metal grain granularity variability effects. The on-current of the device is strongly affected by any line-edge roughness taking place near the source-gate junction or by metal grains localised between the middle of the gate and the proximity of the gate-source junctioneng© 2019 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/)https://creativecommons.org/licenses/by/4.0/Nanowire field-effect transistorsVariability effectsMonte CarloSchrödinger based quantum correctionsDrift-diffusionjournal article10.3390/ma121523911996-1944open access