Fernández, Eduardo F.Seoane Iglesias, NataliaAlmonacid, FlorenciaGarcía Loureiro, Antonio Jesús2021-03-052021-03-052019Eduardo F. Fernández, Natalia Seoane, Florencia Almonacid and Antonio J. García-Loureiro (2019) Vertical-Tunnel-Junction (VTJ) Solar Cell for Ultra-High Light Concentrations (>2000 Suns). IEEE Electron Device Letters, 40 (1), 44-47. Doi: 10.1109/LED.2018.28802400741-3106http://hdl.handle.net/10347/24653A novel architecture of cell structure tailored to ultra-high (>2000 suns) concentration ratios is proposed. The basic solar cell consists of two p-n junctions connected in series by a highly doped tunnel diode with the metallic contacts located laterally. The tunneling connection allows using direct band-gap semiconductor compounds aiming to optimize the absorption of the spectrum. The performance of the novel architecture is investigated up to ultra-high concentration using TCAD software. Simulations show its viability for developing a new generation of solar cells to increase the potential in terms of efficiency and cost reduction of ultra-high concentrator systems. The solar cell does not show any degradation with concentration and efficiency as high as 28.4% at 15000 suns has been obtained for a preliminary designeng© 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other worksVertical solar cellsConcentrator photovoltaicsGallium arsenide (GaAs)Tunnel diodeSeries resistancejournal article10.1109/LED.2018.28802401558-0563open access