RT Journal Article
T1 Closed-Form and Explicit Analytical Model for Crosstalk in CMOS Photodiodes
A1 Blanco Filgueira, Beatriz
A1 López Martínez, Paula
A1 Roldán Aranda, Juan Bautista
K1 Crosstalk (CTK)
K1 Modeling
K1 Photodiodes (PDs)
K1 Simulation
AB A closed-form and explicit 2-D analytical model for crosstalk(CTK) effects in p-n + CMOS photodiodes for pixel design optimization has been developed in this paper. This model complements and extends a previous development describing the photocurrent because of the active area illumination along with the lateral depletion region and lateral components owing to the diffused photocarriers from the surroundings of the junction. The model has very few fitting parameters because it is physically based. Similarly, it can be of great use for CMOS image sensors designers, especially to fulfill high resolution and small area requirements by pixel size reduction. The model was validated extensively through device simulations with ATLAS and experimental data, and describes the CTK dependencies on light conditions and physical, geometrical, and process parameters
PB IEEE
SN 0018-9383
YR 2013
FD 2013-08-20
LK http://hdl.handle.net/10347/18339
UL http://hdl.handle.net/10347/18339
LA eng
NO Beatriz Blanco-Filgueira, Paula López Martínez, and Juan Bautista Roldán Aranda (2013) A closedform and explicit analytical model for crosstalk in CMOS photodiodes. IEEE TRANSACTIONS ON ELECTRON DEVICES, 60(10), 3459-3464. Doi: 10.1109/TED.2013.2276748
NO This work has been partially supported by the Spanish Government under projects TEC2009-12686 and TEC2012-38921-C02-02 (co-funded by the European Region Development Fund, ERDF/FEDER), by the Xunta de Galicia under project 10PXIB206037PR, by the Junta de Andalucía under project P08-TIC-3580 and by AE CITIUS under the project CN2012/151 ofthe Xunta de Galicia (ERDF/FEDER)
DS Minerva
RD 27 abr 2026