RT Journal Article
T1 Strain-induced enhancement of the thermoelectric power in thin films of hole-doped La2NiO4+δ
A1 Bach, P. L.
A1 Vila Fungueiriño, José Manuel
A1 Leborán Alvarez, Víctor
A1 Ferreiro Vila, Elías
A1 Rodríguez-González, Benito
A1 Rivadulla Fernández, José Francisco
AB We propose a novel route for optimizing the thermoelectric power of a polaronic conductor, independent of its electronic conductivity. This mechanism is exemplified here in thin-films of La2NiO4+δ. Tensile stress induced by epitaxial growth on SrTiO3 doubles the thermoelectric power of ≈15 nm thick films relative to ≈90 nm films, while the electronic conductivity remains practically unchanged. Epitaxial strain influences the statistical contribution to the high temperature thermopower, but introduces a smaller correction to the electronic conductivity. This mechanism provides a new way for optimizing the high temperature thermoelectric performance of polaronic conductors
PB AIP Publishing
YR 2013
FD 2013
LK http://hdl.handle.net/10347/17039
UL http://hdl.handle.net/10347/17039
LA eng
NO Bach, P., Vila-Fungueiriño, J., Leborán, V., Ferreiro-Vila, E., Rodríguez-González, B., & Rivadulla, F. (2013). Strain-induced enhancement of the thermoelectric power in thin films of hole-doped La2NiO4+δ. APL Materials, 1(2), 021101. doi: 10.1063/1.4818356
NO This work was supported by the European Research Council (ERC StG-259082, 2DTHERMS), and Ministerio de Economía y Competitividad of Spain through the project MAT2010-16157, and a Ph.D. grant of the FPI program (J.M.V.-F.)
DS Minerva
RD 24 abr 2026