RT Journal Article
T1 Benchmarking of FinFET, Nanosheet, and Nanowire FET Architectures for Future Technology Nodes
A1 Nagy, Daniel
A1 Espiñeira Deus, Gabriel
A1 Indalecio Fernández, Guillermo
A1 García Loureiro, Antonio Jesús
A1 Kalna, Karol
A1 Seoane Iglesias, Natalia
K1 FinFETs
K1 Monte Carlo
K1 Schrödinger quantum correction
K1 Nanowire
K1 Nanosheet
AB Nanosheet (NS) and nanowire (NW) FET architectures scaled to a gate length (L G ) of 16 nm and below are benchmarked against equivalent FinFETs. The device performance is predicted using a 3D finite element drift-diffusion/Monte Carlo simulation toolbox with integrated 2D Schrödinger equation based quantum corrections. The NS FET is a viable replacement for the FinFET in high performance (HP) applications when scaled down to L G of 16 nm offering a larger on-current (I ON ) and slightly better sub-threshold characteristics. Below L G of 16 nm, the NW FET becomes the most promising architecture offering an almost ideal sub-threshold swing, the smallest off-current (I OFF ), and the largest I ON /I OFF ratio out of the three architectures. However, the NW FET suffers from early ION saturation with the increasing gate bias that can be tackled by minimizing interface roughness and/or by optimisation of a doping profile in the device body
PB IEEE
YR 2020
FD 2020
LK http://hdl.handle.net/10347/23424
UL http://hdl.handle.net/10347/23424
LA eng
NO D. Nagy, G. Espiñeira, G. Indalecio, A. J. García-Loureiro, K. Kalna and N. Seoane, "Benchmarking of FinFET, Nanosheet, and Nanowire FET Architectures for Future Technology Nodes," in IEEE Access, vol. 8, pp. 53196-53202, 2020, doi: 10.1109/ACCESS.2020.2980925.
NO This work was supported in part by the Spanish Government under Project TIN2013-41129-P and Project TIN2016-76373-P, in part by the Xunta de Galicia and FEDER Funds under Grant GRC 2014/008, and in part by the Consellería de Cultura, Educación e Ordenación Universitaria (accreditation 2016–2019) under Grant ED431G/08. The work of Guillermo Indalecio was supported by the Programa de Axudas á Etapa Posdoutoral da Xunta de Galicia under Grant 2017/077. The work of Natalia Seoane was supported by the RyCProgramme of the Spanish Ministerio de Ciencia, Innovación y Universidades under Grant RYC-2017-23312
DS Minerva
RD 22 abr 2026