RT Journal Article
T1 Contribution to the Physical Modelling of Single Charged Defects Causing the Random Telegraph Noise in Junctionless FinFET
A1 Atamuratov, Atabek E.
A1 Khalilloev, Mahkam M.
A1 Yusupov, Ahmed
A1 García Loureiro, Antonio Jesús
A1 Chedjou, Jean Chamberlain
A1 Kyandoghere, Kyamakya
K1 Single defect
K1 Random telegraph noise
K1 Junctionless FinFET
K1 Oxide layer
K1 Oxide–semiconductor interface
AB In this paper, different physical models of single trap defects are considered, which are localized in the oxide layer or at the oxide–semiconductor interface of field effect transistors. The influence of these defects with different sizes and shapes on the amplitude of the random telegraph noise (RTN) in Junctionless Fin Field Effect Transistor (FinFET) is modelled and simulated. The RTN amplitude dependence on the number of single charges trapped in a single defect is modelled and simulated too. It is found out that the RTN amplitude in the Junctionless FinFET does not depend on the shape, nor on the size of the single defect area. However, the RTN amplitude in the subthreshold region does considerably depend on the number of single charges trapped in the defect
PB MDPI
YR 2020
FD 2020
LK http://hdl.handle.net/10347/23661
UL http://hdl.handle.net/10347/23661
LA eng
NO Atamuratov, A.E.; Khalilloev, M.M.; Yusupov, A.; García-Loureiro, A.J.; Chedjou, J.C.; Kyandoghere, K. Contribution to the Physical Modelling of Single Charged Defects Causing the Random Telegraph Noise in Junctionless FinFET. Appl. Sci. 2020, 10, 5327
NO This research was funded by Ministry of Innovation Development of the Republic of Uzbekistan, grant number OT-F2-67
DS Minerva
RD 29 abr 2026