RT Journal Article
T1 Random Dopant, Line-Edge Roughness, and Gate Workfunction Variability in a Nano InGaAs FinFET
A1 Seoane Iglesias, Natalia
A1 Indalecio Fernández, Guillermo
A1 Comesaña Figueroa, Enrique
A1 Aldegunde, M.
A1 García Loureiro, Antonio Jesús
A1 Kalna, K.
K1 III–V materials
K1 FinFETs
K1 Gate workfunction variability
K1 Intrinsic parameter fluctuations
K1 Line-edge roughness (LER)
K1 Random dopant (RD)
AB A 3-D quantum-corrected drift-diffusion (DD) simulation study of three sources of statistical variability, including discrete random dopants (RDs), line-edge roughness (LER), and metal gate workfunction (MGW) was performed for a 14-nm gate length In0.53Ga0.47As FinFET in the subthreshold region using Fermi-Dirac statistics. This paper has been done at both low (0.05 V) and high drain biases (0.6 V). The LER variability is characterized by the root mean square amplitude (Δ) and correlation length (Λ), and the MGW variability by the metal grain size (GS). The RD-induced variation σ VT = 6 mV is similar to that observed in Si SoI FinFETs. The LER-induced threshold voltage variations (σ VT <; 6 mV) are similar to the RD variations when Δ = 1 nm, and smaller than the observed in Si SoI FinFETs (18 mV). For larger A, the LER exhibits σ VT ranging from 11 mV when Λ = 10 nm and Δ = 2 nm to 19 mV when Λ = 20 nm and Δ = 3 nm. The MGW variations are the dominant source of variability in the subthreshold characteristics, the σ VT ranges from 106 mV when GS = 10 nm to 43 mV when GS = 3 nm, which is larger than those observed in equivalent TiN metal-gate Si FinFETs.
PB IEEE
SN 0018-9383
YR 2013
FD 2013-12-23
LK https://hdl.handle.net/10347/38900
UL https://hdl.handle.net/10347/38900
LA eng
NO Seoane, N., Indalecio, G., Comesaña, E.  Aldegunde, M., García-Loureiro, A. J.  and Kalna, K. (2014). Random Dopant, Line-Edge Roughness, and Gate Workfunction Variability in a Nano InGaAs FinFET. “IEEE Transactions on Electron Devices”, vol. 61, no. 2, pp. 466-472, doi: 10.1109/TED.2013.2294213
DS Minerva
RD 4 may 2026