RT Journal Article
T1 GaAs Vertical-Tunnel-Junction Converter for Ultra-High Laser Power Transfer
A1 Outes, Celia
A1 Fernández Fernández, Eduardo
A1 Seoane Iglesias, Natalia
A1 Almonacid, Florencia
A1 García Loureiro, Antonio Jesús
K1 Laser power transfer
K1 Power converter
K1 Tunnel-junction
K1 Vertical- structure
K1 GaAs
K1 Series resistance
AB High power laser transmission is being intensively researched as a potential solution to transfer power to remote systems, being the power converter (PC) one of the main limiting factor to improve the system efficiency ( η ). Current PCs are mostly horizontal structures in which the η heavily decreases at large input power. In this work, we propose a novel GaAs-based vertical-tunnel-junction (VTJ) PC suitable for ultra-high (UH) input power density (Pin). This structure does not suffer from η degradation at high Pin because it is designed to have low current density, high output voltage and reduced series resistance (~ 2 orders of magnitude lower than the state-of-the-art PCs). We have demonstrated increasing η with Pin, reaching values higher than 76% at 3000 W⋅ cm−2. This vertical-based architecture enables a new set of potential applications for wireless PC to power remote systems with η exceeding today’ s state-of-the-art PC designs.
PB IEEE
SN 1558-0563
YR 2021
FD 2021-10-19
LK https://hdl.handle.net/10347/38771
UL https://hdl.handle.net/10347/38771
LA eng
DS Minerva
RD 24 abr 2026