RT Journal Article
T1 Interfacial Thermal Resistive Switching in (Pt,Cr)/SrTiO3 Devices
A1 Álvarez-Martínez, Víctor
A1 Ramos Amigo, Rafael Enrique
A1 Leborán, Víctor
A1 Sarantopoulos, Alexandros
A1 Dittmann, Regina
A1 Rivadulla Fernández, José Francisco
K1 Thermal resistive switching
K1 Ionic devices
K1 Thermal conductivity
K1 Active interfaces
K1 Memristor
K1 Thermal memories
AB The operation of oxide-based memristive devices relies on the fast accumulation and depletion of oxygen vacancies by an electric field close to the metal–oxide interface. Here, we show that the reversible change of the local concentration of oxygen vacancies at this interface also produces a change in the thermal boundary resistance (TBR), i.e., a thermal resistive switching effect. We used frequency domain thermoreflectance to monitor the interfacial metal–oxide TBR in (Pt,Cr)/SrTiO3 devices, showing a change of ≈20% under usual SET/RESET operation voltages, depending on the structure of the device. Time-dependent thermal relaxation experiments suggest ionic rearrangement along the whole area of the metal/oxide interface, apart from the ionic filament responsible for the electrical conductivity switching. The experiments presented in this work provide valuable knowledge about oxide ion dynamics in redox-based memristive devices.
PB American Chemical Society
SN 1944-8244
YR 2024
FD 2024
LK http://hdl.handle.net/10347/33839
UL http://hdl.handle.net/10347/33839
LA eng
NO Víctor Álvarez-Martínez, Rafael Ramos, Víctor Leborán, Alexandros Sarantopoulos, Regina Dittmann and Francisco Rivadulla. Interfacial Thermal Resistive Switching in (Pt,Cr)/SrTiO3 Devices. ACS Appl. Mater. Interfaces 2024, 16, 12, 15043–15049
NO This work was supported by the RYC Grant 2019-026915-I (R.R.), Project TED2021-130930B-I00, PID2019-104150RB-I00, and PID2022-138883NB-I00 funded by the MCIN/AEI/10.13039/501100011033 and by the ESF investing in your future, and the European Union NextGeneration EU/PRTR, Xunta de Galicia (ED431F 2022/04, ED431B 2021/013, Centro Singular de Investigación de Galicia Accreditation 2019-2022, and ED431G 2019/03), and the European Union (European Regional Development Fund─ERDF) A.S. and R.D. acknowledge support from the Federal Ministry of Education and Research (Project NEUROTEC, Grants No. 16ME0398K and No. 16ME0399).
DS Minerva
RD 23 abr 2026