RT Journal Article
T1 Impact of intrinsic parameter fluctuations on the performance of In0.75Ga0.25As implant free MOSFETs
A1 Seoane Iglesias, Natalia
A1 García Loureiro, Antonio Jesús
A1 Aldegunde Villar, Manuel Alejo
A1 Kalna, K.
A1 Asenov, A.
K1 MOSFETs
K1 Simulation
K1 In0.75Ga0.25
AB We investigate the level of statistical variability in implant free (IF) MOSFETs, which are one of the most promising candidates III–V channels implementation. We report results for the threshold voltage (VT) fluctuations in aggressively scaled IF III–V MOSFETs induced by random discrete dopants in the δ-doping plane obtained using 3D drift–diffusion (D–D) device simulations. The D–D simulator is meticulously calibrated against results obtained from ensemble Monte Carlo device simulations. The simulated 30, 20 and 15 nm gate length In0.75Ga0.25As channel IF transistors exhibit threshold voltage standard deviations of 42, 58 and 61 mV, respectively, at a drain voltage of 0.1 V. At a drain voltage of 0.8 V, the threshold voltage standard deviations increase to 55, 71 and 81 mV, respectively. While the standard deviations of VT in the 30 and 20 nm IF MOSFETs are close to those observed in bulk Si MOSFETs with equivalent gate lengths, the threshold voltage standard deviation in the 15 nm gate length IF MOSFET is lower.
PB IOP Publishing
SN 0268-1242
YR 2009
FD 2009-04
LK https://hdl.handle.net/10347/38752
UL https://hdl.handle.net/10347/38752
LA eng
NO Seoane, N., Garcia-Loureiro, A., Aldegunde, M., Kalna, K., & Asenov, A. (2009). Impact of intrinsic parameter fluctuations on the performance of In0.75Ga0.25As implant free MOSFETs. Semiconductor Science And Technology, 24(5), 055011. https://doi.org/10.1088/0268-1242/24/5/055011
NO This work was supported by Spanish Government (TIN2007–67537–C03–01) and by Xunta de Galicia (DXIDI07TIC01CT and INCITE08PXIB206094PR). NS and MA thank Xunta de Galicia and Ministerio de Educación y Ciencia de España for their awarded fellowships (A. Alvariño and FPU respectively). NS also thanks Xunta de Galicia for providing financial support for her position as a visiting researcher at the University of Glasgow. KK would like to acknowledge the UK EPSRC support through grant (EP/D070236/1)
DS Minerva
RD 28 abr 2026