RT Journal Article
T1 Comparison of Fin-Edge Roughness and Metal Grain Work Function Variability in InGaAs and Si FinFETs
A1 Seoane Iglesias, Natalia
A1 Indalecio Fernández, Guillermo
A1 Aldegunde, M.
A1 Nagy, Daniel
A1 Elmessary, M. A.
A1 García Loureiro, Antonio Jesús
A1 Kalna, K.
K1 III-V materials
K1 Fin-edge roughness (FER)
K1 FinFETs
K1 Gate work function variability
K1 Intrinsic parameter fluctuations
K1 Si
AB The fin-edge roughness (FER) and the TiN metal grain work function (MGW)-induced variability affecting OFF and ON device characteristics are studied and compared between a 10.4-nm gate length In0.53Ga0.47As FinFET and a 10.7-nm gate length Si FinFET. We have analyzed the impact of variability by assessing five figures of merit (threshold voltage, subthreshold slope, OFF-current, drain-induced-barrier-lowering, and ON-current) using the two state-of-the-art in-house-build 3-D simulation tools based on the finite-element method. Quantum-corrected 3-D drift-diffusion simulations are employed for variability studies in the subthreshold region while, in the ON-region, we use quantum-corrected 3-D ensemble Monte Carlo simulations. The In0.53Ga0.47As FinFET is more resilient to the FER and MGW variability in the subthreshold compared with the Si FinFET due to a stronger quantum carrier confinement present in the In0.53Ga0.47As channel. However, the ON-current variability is between 1.1 and 2.2 times larger for the In0.53Ga0.47As FinFET than for the Si counterpart, respectively.
PB IEEE
SN 0018-9383
YR 2016
FD 2016-01-27
LK https://hdl.handle.net/10347/38930
UL https://hdl.handle.net/10347/38930
LA eng
NO Seoane, N., Indalecio, G., Aldegunde, M., Nagy, D., Elmessary, M. A., García-Loureiro, A., Kalna, K. (2016). Comparison of Fin-Edge Roughness and Metal Grain Work Function Variability in InGaAs and Si FinFETs. "IEEE Transactions on Electron Devices”, vol. 63, no. 3, pp. 1209-1216, doi: 10.1109/TED.2016.2516921
DS Minerva
RD 22 abr 2026