RT Journal Article
T1 Development of a silicon bulk radiation damage model for Sentaurus TCAD
A1 Folkestad, Å.
A1 Akiba, K.
A1 Beuzekom, M. van
A1 Buchanan, E.
A1 Collins, P.
A1 Dall'Occo, E.
A1 Canto, A. Di
A1 Evans, T.
A1 Franco Lima, V.
A1 García Pardiñas, Julián
A1 Schindler, H.
A1 Vicente, M.
A1 Vieites Díaz, María
A1 Williams, M.
K1 Silicon sensor
K1 Silicon pixel detector
K1 Radiation damage
K1 TCAD
K1 Device simulation
AB This article presents a new bulk radiation damage model for p-type silicon for use in Synopsys Sentaurus TCAD. The model is shown to provide agreement between experiment and simulation for the voltage dependence of the leakage current and the charge collection efficiency, for fluences up to 8 × 1015 1 MeV neq∕cm2.
PB Elsevier
SN 0168-9002
YR 2017
FD 2017-12-01
LK https://hdl.handle.net/10347/46235
UL https://hdl.handle.net/10347/46235
LA eng
NO Folkestad, Å, Akiba, K., van Beuzekom, M., Buchanan, E., Collins, P., Dall’Occo, E., Di Canto, A., Evans, T., Franco Lima, V., García Pardiñas, J., Schindler, H., Vicente, M., Vieites Diaz, M., & Williams, M. (2017). Development of a silicon bulk radiation damage model for Sentaurus TCAD. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 874, 94–102. https://10.1016/j.nima.2017.08.042
NO This project has received funding from the European Union’s Horizon 2020 Research and Innovation programme under Grant Agreement no. 654168
DS Minerva
RD 25 may 2026