RT Journal Article
T1 Simulation of the spin polarization and the charge transport in Zener tunnel junctions based on ferromagnetic GaAs and ZnO
A1 Comesaña Figueroa, Enrique
A1 Aldegunde Rodríguez, Manuel
A1 García Loureiro, Antonio Jesús
K1 Magnetoelectronics
K1 Spintronics
K1 Spin-polarized transport in semiconductors
K1 Junction diodes
K1 Tunneling
K1 III–V semiconductors
K1 II–VI semiconductors
AB Simulations of the tunneling current as a function of voltage for a Zener diode where both sides are ferromagnetic have been performed. The current is evaluated as a function of the voltage and of the magnetization on each side of the diode. Calculations are made using an in-house developed simulator which solves the Poisson, electron and hole continuity equations self-consistently. The drift-diffusion model is used to calculate the charge carrier distribution. The current expressions were modified to consider degenerate semiconductors. Our simulator includes a non-local tunneling transport model which was modified to account for the spin polarization of the carriers. The tunneling magnetoresistance is obtained from the I–V characteristics for parallel and antiparallel configurations of the magnetization vectors in each side of the device. Two different devices were analyzed, one that corresponds to Mn-doped GaAs in which the ferromagnetism is stronger on the p side of the diode, and the other that corresponds to ZnO where there are likely to be many more carriers on the n side of the diode. We found good agreement between the results of our simulations and the theoretical predictions of the tunneling magnetoresistance, especially at room temperature. We also found that larger bandgap materials show larger tunneling current but lower tunnel magnetoresistance
PB Elsevier B.V.
SN 0010-4655
YR 2013
FD 2013-03-01
LK https://hdl.handle.net/10347/45422
UL https://hdl.handle.net/10347/45422
LA eng
NO E. Comesaña, M. Aldegunde, A.J. Garcia-Loureiro, Simulation of the spin polarization and the charge transport in Zener tunnel junctions based on ferromagnetic GaAs and ZnO, Computer Physics Communications, Volume 184, Issue 3, 2013, Pages 746-756, ISSN 0010-4655, https://doi.org/10.1016/j.cpc.2012.11.010
NO This work was supported by the Spanish Government under the project MCYT TIN2007-67537-C03-01, the Ministry of Education and Science of Spain, Xunta de Galicia and FEDER funds under project TEC2010-17320 and contracts 2010/28 and 09TIC001CT
DS Minerva
RD 24 abr 2026