RT Journal Article
T1 Comprehensive characterization and optoelectronic significance of Ho3+ and Cr3+ Co-doped ZnAl2O4 spinels
A1 Elhamdi, I.
A1 Souissi, H.
A1 Kammoun, H.
A1 Dhahri, E.
A1 Pina, J.
A1 Costa, B.F.O.
A1 López Lago, María Elena
K1 Spinel oxide
K1 Ramen
K1 FTIR
K1 UV/Vis spectroscopy
K1 Optical band-gap
K1 EPR measurement
AB The spinels ZnAl1.99−xHoxCr0.01O4 (with x = 0 and 0.001) were synthesized using a solid-state method, and various techniques were employed for their characterization. X-ray diffraction (XRD) analysis confirmed a cubic spinel structure with the Fd[3 with combining macron]m space group for both spinels. The morphology and homogeneity of the chemical composition were determined using scanning electron microscopy (SEM) and energy dispersive X-ray analysis. Raman and infrared vibrational spectroscopy techniques were also employed for analysis. The optical band gap (Eg) was determined from UV/vis absorption spectra, and the direct transition behavior was confirmed by Tauc's law. The observed large disorder and defect concentration are attributed to the presence of Cr3+ and Ho3+ ions, explaining this behavior. The electron paramagnetic resonance (EPR) measurement presented different types of traps. Room temperature absorption spectra exhibited multiple peaks corresponding to the 3d–3d and 4f–4f transitions of Cr3+ and Ho3+ ions. The results obtained validate the significance of our compounds in optoelectronic device applications.
PB Royal Society of Chemistry
YR 2024
FD 2024-04-16
LK https://hdl.handle.net/10347/43415
UL https://hdl.handle.net/10347/43415
LA eng
NO Elhamdi, I., Souissi, H., Kammoun, S., Dhahri, E., Pina, J., Costa, B. F. O. andLópez-Lago, E. (2024). Comprehensive characterization and optoelectronic significance of Ho3+ and Cr3+ Co-doped ZnAl2O4 spinels. 	Dalton Trans., 2024,53, 7721-7733
DS Minerva
RD 30 abr 2026