RT Journal Article
T1 Three-dimensional simulations of random dopant and metal-gate workfunction variability in an In0.53Ga0.47As GAA MOSFET
A1 Seoane Iglesias, Natalia
A1 Indalecio Fernández, Guillermo
A1 Comesaña Figueroa, Enrique
A1 García Loureiro, Antonio Jesús
A1 Aldegunde Villar, Manuel Alejo
A1 Kalna, Karol
K1 Density gradient (DG)
K1 Drift–diffusion (DD)
K1 Gate-all-around (GAA) MOSFETs
K1 III–V materials
K1 Intrinsic parameter fluctuations
AB We investigate the impacts of random dopant (RD) and gate workfunction variability on the subthreshold characteristics of a 50-nm-gate-length inversion-mode gate-all-around In0.53Ga0.47As MOSFET using a 3-D finite-element quantum-corrected drift-diffusion device simulator calibrated to experimental data. We have studied threshold voltage, off-current, and subthreshold slope variations. The workfunction variations on the subthreshold characteristics dominate and decrease with the reduction in grain diameter. The simulated grain diameters of 10, 7, and 5 nm exhibit threshold voltage standard deviations of 52, 41, and 27 mV, respectively. These values are larger than those observed in TiN-metal-gate Si FinFETs for a similar gate length. The impact of RD fluctuations is negligible when compared with bulk Si MOSFETs, giving a threshold voltage spread of only 6 mV.
PB IEEE
SN 1558-0563
YR 2013
FD 2013-01-09
LK https://hdl.handle.net/10347/38950
UL https://hdl.handle.net/10347/38950
LA eng
NO N. Seoane, G. Indalecio, E. Comesana, A. J. Garcia-Loureiro, M. Aldegunde and K. Kalna, "Three-dimensional simulations of random dopant and metal-gate workfunction variability in an In0.53Ga0.47As GAA MOSFET," in IEEE Electron Device Letters, vol. 34, no. 2, pp. 205-207, Feb. 2013, doi: 10.1109/LED.2012.2230313
DS Minerva
RD 25 abr 2026