RT Journal Article
T1 Vacuum annealing effect on physical properties and electrical circuit model of ZnO:Sn/SnO2:F bilayer structure
A1 Dabbabi, Samar
A1 Souli, Mehdi
A1 Ben Nasr, Tarek
A1 García Loureiro, Antonio Jesús
A1 Kamoun, Najoua
K1 Spray pyrolysis
K1 ZnO:Sn/SnO2:F film
K1 Electrical properties
K1 Impedance spectroscopy
AB Tin doped Zinc oxide/Fluorine doped tin dioxide bilayer films (ZnO:Sn/SnO2:F) were deposited on glass substrates using spray pyrolysis technique. The effect of vacuum annealing at different temperatures was investigated. Both structural and morphological analysis have shown that there is a significant modification in the bilayer film structure and surface following the vacuum annealing process at 450 °C. Electrical properties have been investigated using the Hall Effect measurements as well as the impedance spectroscopy at room temperature. The circuit parameters were determined using an equivalent circuit model fitted from the impedance spectra and suggesting the presence of grain and grain boundary conductions in the bilayer structure. It was found that the film annealed in vacuum for 1 h at 350 °C is optimal in all respects, as it possesses all the desirable characteristics including the lowest resistivity, high porosity and better grain boundary conductivity
PB Elsevier
SN 0042-207X
YR 2019
FD 2019
LK http://hdl.handle.net/10347/24647
UL http://hdl.handle.net/10347/24647
LA eng
NO Vacuum, Volume 167, September 2019, Pages 416-420
DS Minerva
RD 29 abr 2026