RT Journal Article
T1 A comprehensive Pelgrom-based on-current variability model for FinFET, NWFET and NSFET
A1 García Fernández, Julián
A1 Seoane Iglesias, Natalia
A1 Comesaña Figueroa, Enrique
A1 García Loureiro, Antonio Jesús
K1 TCAD
K1 FinFET
K1 Nanowire FET
K1 Nanosheet FET
K1 Pelgrom
K1 Prediction model
K1 Monte carlo
AB We present a novel Pelgrom-based predictive (PBP) model to estimate the impact of variability on the on-current of different state-of-the-art semiconductor devices. In this work, we focus on two of the most problematic sources of variability, the metal grain granularity (MGG) and the line edge roughness (LER). This model allows us to make an accurate prediction of the on-current standard deviation , being the relative error of the predicted data lower than 8% in 92% of the studied cases. The PBP model entails an immense reduction in the computational cost since once it is calibrated for an architecture, the prediction of the impact of a variability on devices with any given dimension can be made without any further simulations. This model could be useful for predicting the effect of variability on future technology nodes
PB Elsevier
YR 2022
FD 2022
LK http://hdl.handle.net/10347/29485
UL http://hdl.handle.net/10347/29485
LA eng
NO Solid-State Electronics 199 (2023), 108492
NO This work was supported by the Spanish MICINN, Xunta de Galicia, and FEDER Funds under Grant RYC-2017-23312, Grant PID2019-104834GB-I00, Grant ED431F 2020/008, and Grant ED431C 2022/16
DS Minerva
RD 23 abr 2026