RT Journal Article
T1 Simulation of DIBL effect in 25 nm SOI-FinFET with the different body shapes
A1 Atamuratov, Atabek E.
A1 Abdikarimov, A.
A1 Khalilloev, Mahkam M.
A1 Atamuratova, Z. A.
A1 Rahmanov, R.
A1 García Loureiro, Antonio Jesús
A1 Yusupov, Ahmed
K1 FinFET
K1 DIBL
K1 Potential barrier
AB Short channel effects, such as DIBL are compared for SOI-FinFETs with different silicon body geometries. The original device considered wasstraight without narrowing at the top and a set of devices that exhibit the mentioned narrowing, up to the extreme case where the top of the gatehas no surface and so the body cross-section is essentially a triangle. We have studied five different variations from the original geometry of a25 nm gate length SOI-FinFET device with 1.5 nm thick oxide layer. The P-type channel had a doping concentration of 1015 cm−3and n-typeS/D areas are doped at concentrations of 1020 cm−3. The silicon body of the device accordingly had a height of 30 nm and a width of 12nm. Simulation results show the source-drain barrier decreasing with increasing the upper body thickness. The DIBL effect of the consideredFinFETs depends on upper body thickness, tending to increase with thicker upper body widths. Results of a comparison of two devices withdifferent shapes but with the same cross-sectional area shows the relationship mainly depends on the shape rather than the cross-section area of the device body
PB ITMO University
SN 2220-8054
YR 2017
FD 2017
LK http://hdl.handle.net/10347/17727
UL http://hdl.handle.net/10347/17727
LA eng
NO Atamuratov, A., Abdikarimov, A., Khalilloev, M., Atamuratova, Z.A., Rahmanov, R., García Loureiro, A. & Yusupov, A. (2017). Simulation of DIBL effect in 25 nm SOI-FinFET with the different body shapes. Nanosystems: Physics, Chemistry, Mathematics, 8 (1), P. 71–74
DS Minerva
RD 23 abr 2026