RT Journal Article
T1 Combined nanoscale KPFM characterization and device simulation for the evaluation of the MOSFET variability related to metal gate workfunction fluctuations
A1 Ruiz, Ana
A1 Seoane Iglesias, Natalia
A1 Claramunt, Sergi
A1 García Loureiro, Antonio Jesús
A1 Porti, Marc
A1 Nafria, Montserrat
AB In this work, a more realistic approximation based on 2D nanoscale experimental data obtained on a metal layer is presented to investigate the impact of the metal gate polycrystallinity on the MOSFET variability. The nanoscale data (obtained with a Kelvin Probe Force Microscope, KPFM) were introduced in a device simulator to analyze the effect of a TiN metal gate work functions (WF) fluctuations on the MOSFET electrical characteristics. The results demonstrate that the device characteristics are affected not only by the WF fluctuations, but also their spatial distribution, which is specially relevant in very small devices. The effect on these characteristics of the spatial distribution on the gate area of such fluctuations is also evaluated
PB Elsevier
SN 0167-9317
YR 2019
FD 2019
LK http://hdl.handle.net/10347/24645
UL http://hdl.handle.net/10347/24645
LA eng
NO Microelectronic Engineering, Volume 216, 15 August 2019, 111048
NO This work has been partially supported by the Spanish AEI and ERDF (TEC2016-75151-C3-1-R, TEC2014-53909-REDT and RYC-2017-23312)
DS Minerva
RD 29 abr 2026