RT Journal Article
T1 Current Variability in Si Nanowire MOSFETs Due to Random Dopants in the Source/Drain Regions: A Fully 3-D NEGF Simulation Study
A1 Seoane Iglesias, Natalia
A1 Martinez, Antonio
A1 Brown, Andrew R.
A1 Barker, John R.
A1 Asenov, Asen
K1 Impurities
K1 Electric potential
K1 Mathematical model
K1 Scattering
K1 Silicon
K1 Resistance
K1 Doping
AB In this paper, we study the impact of random discrete dopants in the source/drain (S/D) leads on the current variability of a gate-all-around Si nanowire transistor. Due to the strong inhomogeneities of the self-consistent electrostatic potential, a fully 3D real-space nonequilibrium Green's function (NEGF) formalism is used. N-channel transistors with random discrete donors in the S/D regions varying in both numbers and locations have been simulated. We have studied the impact of quasi-bound (QB) states and transmission resonances associated with the attractive potential of the donors on the screening of the impurities and on the current transport. The convergence of the coupled 3D Poisson-NEGF equations for narrow wires with discrete dopants is cumbersome due to the quasi-discrete nature of QB states and resonances of the attractive impurity potential. We present a robust solution strategy dealing with the convergence challenges. Large variations in the on-current and modest variations in the subthreshold slope are observed in the I D-V G characteristics when comparing devices with microscopically different discrete dopant configurations. We have also estimated the access resistance associated with the random dopant regions in the source and the drain leads and find very good agreement with the resistance estimated from the bulk silicon mobility at the same doping concentration.
PB Institute of Electrical and Electronics Engineers
SN 0018-9383
YR 2009
FD 2009-07
LK https://hdl.handle.net/10347/38818
UL https://hdl.handle.net/10347/38818
LA eng
NO Seoane, N., Martinez, A., Brown, A. R., Barker, J. R., & Asenov, A. (2009). Current Variability in Si Nanowire MOSFETs Due to Random Dopants in the Source/Drain Regions: A Fully 3-D NEGF Simulation Study. IEEE Transactions On Electron Devices, 56(7), 1388-1395. https://doi.org/10.1109/ted.2009.2021357
DS Minerva
RD 24 abr 2026