RT Journal Article
T1 A Multi-Method Simulation Toolbox to Study Performance and Variability of Nanowire FETs
A1 Seoane Iglesias, Natalia
A1 Nagy, Daniel
A1 Indalecio Fernández, Guillermo
A1 Espiñeira Deus, Gabriel
A1 Kalna, Karol
A1 García Loureiro, Antonio Jesús
K1 Nanowire field-effect transistors
K1 Variability effects
K1 Monte Carlo
K1 Schrödinger based quantum corrections
K1 Drift-diffusion
AB An in-house-built three-dimensional multi-method semi-classical/classical toolbox has been developed to characterise the performance, scalability, and variability of state-of-the-art semiconductor devices. To demonstrate capabilities of the toolbox, a 10 nm gate length Si gate-all-around field-effect transistor is selected as a benchmark device. The device exhibits an off-current ( IOFF ) of 0.03 μ A/ μ m, and an on-current ( ION ) of 1770 μ A/ μ m, with the ION/IOFF ratio 6.63×104 , a value 27% larger than that of a 10.7 nm gate length Si FinFET. The device SS is 71 mV/dec, no far from the ideal limit of 60 mV/dec. The threshold voltage standard deviation due to statistical combination of four sources of variability (line- and gate-edge roughness, metal grain granularity, and random dopants) is 55.5 mV, a value noticeably larger than that of the equivalent FinFET (30 mV). Finally, using a fluctuation sensitivity map, we establish which regions of the device are the most sensitive to the line-edge roughness and the metal grain granularity variability effects. The on-current of the device is strongly affected by any line-edge roughness taking place near the source-gate junction or by metal grains localised between the middle of the gate and the proximity of the gate-source junction
PB MDPI
YR 2019
FD 2019
LK http://hdl.handle.net/10347/21248
UL http://hdl.handle.net/10347/21248
LA eng
NO Seoane, N.; Nagy, D.; Indalecio, G.; Espiñeira, G.; Kalna, K.; García-Loureiro, A. A Multi-Method Simulation Toolbox to Study Performance and Variability of Nanowire FETs. Materials 2019, 12, 2391
NO This research was supported in part by the Spanish Government under the projects TIN2013-41129-P, TIN2016-76373-P and RYC-2017-23312, by Xunta de Galicia and FEDER funds (GRC 2014/008) and by the Consellería de Cultura, Educación e Ordenación Universitaria (accreditation 2016-2019, ED431G/08)
DS Minerva
RD 28 abr 2026