RT Journal Article
T1 0.6-V-VIN 7.0-nA-IQ 0.75-mA-IL CMOS Capacitor-Less LDO for Low-Voltage Micro-Energy-Harvested Supplies
A1 Pereira Rial, Óscar
A1 López Martínez, Paula
A1 Carrillo, Juan M.
K1 bulk-driven MOS
K1 capacitor-less LDO
K1 energy harvesting
K1 low-power
K1 low-voltage
AB A capacitor-less (CL) low-dropout (LDO) regulatorsuitable to be incorporated in an on-chip system with low-voltagemicro-energy-harvested supply, is proposed in this contribution.The differential input stage of the error amplifier includesbulk-driven MOS transistors, thus providing the LDO with anoutput voltage range that extends from the negative rail up to alevel very close to the input voltage without the need of using aresistive feedback network. The circuit parameters relying on thefeedback factor,  , are maximized thanks to the use of a unitaryvalue for this parameter. The CL-LDO has been designed andfabricated in standard 180-nm CMOS technology and optimizedto operate with an input voltage equal to 0.6 V and a referencelevel of 0.5 V. The experimental characterization of the fabricatedprototypes shows that, under these operating conditions, the LDOis able to deliver a load current above 0.75 mA with a totalquiescent current of only 7.0 nA. Furthermore, the proposedvoltage regulator is able to operate from input voltages as low as0.4 V, delivering in this case a maximum load current of 30 μA.
PB IEEE
SN 1558-0806
YR 2021
FD 2021-11-10
LK http://hdl.handle.net/10347/32657
UL http://hdl.handle.net/10347/32657
LA eng
NO Ó. Pereira-Rial, P. López and J. M. Carrillo, "0.6-V-VIN 7.0-nA-IQ 0.75-mA-IL CMOS Capacitor-Less LDO for Low-Voltage Micro-Energy-Harvested Supplies," in IEEE Transactions on Circuits and Systems I: Regular Papers, vol. 69, no. 2, pp. 599-608, Feb. 2022, doi: 10.1109/TCSI.2021.3123057
NO RTI2018- 095994-B-I00 ED431G-2019/04 GRC2021/48 IB18079
DS Minerva
RD 1 may 2026