RT Journal Article
T1 Vertical-Tunnel-Junction (VTJ) Solar Cell for Ultra-High Light Concentrations (>2000 Suns)
A1 Fernández, Eduardo F.
A1 Seoane Iglesias, Natalia
A1 Almonacid, Florencia
A1 García Loureiro, Antonio Jesús
K1 Vertical solar cells
K1 Concentrator photovoltaics
K1 Gallium arsenide (GaAs)
K1 Tunnel diode
K1 Series resistance
AB A novel architecture of cell structure tailored to ultra-high (>2000 suns) concentration ratios is proposed. The basic solar cell consists of two p-n junctions connected in series by a highly doped tunnel diode with the metallic contacts located laterally. The tunneling connection allows using direct band-gap semiconductor compounds aiming to optimize the absorption of the spectrum. The performance of the novel architecture is investigated up to ultra-high concentration using TCAD software. Simulations show its viability for developing a new generation of solar cells to increase the potential in terms of efficiency and cost reduction of ultra-high concentrator systems. The solar cell does not show any degradation with concentration and efficiency as high as 28.4% at 15000 suns has been obtained for a preliminary design
PB IEEE
SN 0741-3106
YR 2019
FD 2019
LK http://hdl.handle.net/10347/24653
UL http://hdl.handle.net/10347/24653
LA eng
NO Eduardo F. Fernández, Natalia Seoane, Florencia Almonacid and Antonio J. García-Loureiro (2019) Vertical-Tunnel-Junction (VTJ) Solar Cell for Ultra-High Light Concentrations (>2000 Suns). IEEE Electron Device Letters, 40 (1), 44-47. Doi: 10.1109/LED.2018.2880240
NO The work of E. F. Fernández and F. Almonacid was supported by the Spanish Economy Ministry and FEDER funds under Project ENE2016-78251-R. The work of N. Seoane and A. J. García-Loureiro was supported in part by the Spanish Ministry of Economy and Competitiveness and FEDER funds under Grants TEC2014-59402-JIN and TIN2016-76373-P and in part by the Xunta de Galicia and FEDER funds under Grant GRC 2014/008
DS Minerva
RD 8 jun 2026