Analytical Model for Crosstalk in p-nwellPhotodiodes
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IEEE
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The response and crosstalk (CTK) of the p-n well photodiode were studied through device simulations performed with ATLAS and experimental data. As a result, a closed-form and explicit 2-D analytical model for its photoresponse and CTK was developed. The model has very few fitting parameters since it is physically based and describes the CTK dependencies on light conditions and physical, geometrical, and process parameters. This is of great interest for pixel design optimization to fulfill high resolution and small area requirements driven by pixel size reduction. As this model extends a previous one focused on p-n + devices, the behavior of both the structures was also compared
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Beatriz Blanco-Filgueira, Paula López Martínez, Juan Bautista Roldán Aranda, and Johann Hauer (2015). Analytical Model for Crosstalk in p-Nwell Photodiodes. IEEE TRANSACTIONS ON ELECTRON DEVICES, 62(2), 580-586. Doi: 10.1109/TED.2014.2375345
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https://doi.org/10.1109/TED.2014.2375345Sponsors
This work has been partially supported by the Spanish Government under projects TEC2009-12686 and TEC2012-38921-C02-02 (co-funded by the European Region Development Fund, ERDF/FEDER), by the Xunta de Galicia under project 10PXIB206037PR, by the Junta de Andalucía under project P08-TIC-3580 and by AE CITIUS under the project CN2012/151 of the Xunta de Galicia (ERDF/FEDER)
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