Development of a silicon bulk radiation damage model for Sentaurus TCAD

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dc.contributor.affiliationUniversidade de Santiago de Compostela. Departamento de Física de Partículas
dc.contributor.affiliationUniversidade de Santiago de Compostela. Instituto Galego de Física de Altas Enerxías (IGFAE)
dc.contributor.authorFolkestad, Å.
dc.contributor.authorAkiba, K.
dc.contributor.authorBeuzekom, M. van
dc.contributor.authorBuchanan, E.
dc.contributor.authorCollins, P.
dc.contributor.authorDall'Occo, E.
dc.contributor.authorCanto, A. Di
dc.contributor.authorEvans, T.
dc.contributor.authorFranco Lima, V.
dc.contributor.authorGarcía Pardiñas, Julián
dc.contributor.authorSchindler, H.
dc.contributor.authorVicente, M.
dc.contributor.authorVieites Díaz, María
dc.contributor.authorWilliams, M.
dc.date.accessioned2026-03-02T18:31:39Z
dc.date.available2026-03-02T18:31:39Z
dc.date.issued2017-12-01
dc.description.abstractThis article presents a new bulk radiation damage model for p-type silicon for use in Synopsys Sentaurus TCAD. The model is shown to provide agreement between experiment and simulation for the voltage dependence of the leakage current and the charge collection efficiency, for fluences up to 8 × 1015 1 MeV neq∕cm2 .
dc.description.peerreviewedSI
dc.description.sponsorshipThis project has received funding from the European Union’s Horizon 2020 Research and Innovation programme under Grant Agreement no. 654168
dc.identifier.citationFolkestad, Å, Akiba, K., van Beuzekom, M., Buchanan, E., Collins, P., Dall’Occo, E., Di Canto, A., Evans, T., Franco Lima, V., García Pardiñas, J., Schindler, H., Vicente, M., Vieites Diaz, M., & Williams, M. (2017). Development of a silicon bulk radiation damage model for Sentaurus TCAD. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 874, 94–102. https://10.1016/j.nima.2017.08.042
dc.identifier.doi10.1016/j.nima.2017.08.042
dc.identifier.essn1872-9576
dc.identifier.issn0168-9002
dc.identifier.urihttps://hdl.handle.net/10347/46235
dc.journal.titleNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
dc.language.isoeng
dc.page.final102
dc.page.initial94
dc.publisherElsevier
dc.relation.projectIDinfo:eu-repo/grantAgreement/EC/H2020/654168
dc.relation.publisherversionhttps://doi.org/10.1016/j.nima.2017.08.042
dc.rights© 2017 CERN for the benefit of the Authors. Published by Elsevier B.V. This is an open access article under the CC BY license (http://creativecommons.org/licenses/by/4.0/).
dc.rights.accessRightsopen access
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/
dc.subjectSilicon sensor
dc.subjectSilicon pixel detector
dc.subjectRadiation damage
dc.subjectTCAD
dc.subjectDevice simulation
dc.titleDevelopment of a silicon bulk radiation damage model for Sentaurus TCAD
dc.typejournal article
dc.type.hasVersionVoR
dc.volume.number874
dspace.entity.typePublication
relation.isAuthorOfPublication5fe215e9-3b10-4fa1-bde8-254a4282524d
relation.isAuthorOfPublication.latestForDiscovery5fe215e9-3b10-4fa1-bde8-254a4282524d

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