Development of a silicon bulk radiation damage model for Sentaurus TCAD
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ISSN: 0168-9002
E-ISSN: 1872-9576
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Elsevier
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Abstract
This article presents a new bulk radiation damage model for p-type silicon for use in Synopsys Sentaurus TCAD. The model is shown to provide agreement between experiment and simulation for the voltage dependence of the leakage current and the charge collection efficiency, for fluences up to 8 × 1015 1 MeV neq∕cm2
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Folkestad, Å, Akiba, K., van Beuzekom, M., Buchanan, E., Collins, P., Dall’Occo, E., Di Canto, A., Evans, T., Franco Lima, V., García Pardiñas, J., Schindler, H., Vicente, M., Vieites Diaz, M., & Williams, M. (2017). Development of a silicon bulk radiation damage model for Sentaurus TCAD. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 874, 94–102. https://10.1016/j.nima.2017.08.042
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https://doi.org/10.1016/j.nima.2017.08.042Sponsors
This project has received funding from the European Union’s Horizon 2020 Research and Innovation programme under Grant Agreement no. 654168
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© 2017 CERN for the benefit of the Authors. Published by Elsevier B.V. This is an open access article under the CC BY license (http://creativecommons.org/licenses/by/4.0/).