Numerical optimisation and recombination effects on the vertical-tunnel-junction (VTJ) GaAs solar cell up to 10,000 suns

dc.contributor.affiliationUniversidade de Santiago de Compostela. Centro de Investigación en Tecnoloxías da Informacióngl
dc.contributor.affiliationUniversidade de Santiago de Compostela. Departamento de Electrónica e Computacióngl
dc.contributor.areaÁrea de Enxeñaría e Arquitectura
dc.contributor.authorOutes Castro, Celia
dc.contributor.authorFernández, Eduardo F.
dc.contributor.authorSeoane Iglesias, Natalia
dc.contributor.authorAlmonacid, Florencia
dc.contributor.authorGarcía Loureiro, Antonio Jesús
dc.date.accessioned2021-03-05T11:34:30Z
dc.date.available2022-04-20T01:00:10Z
dc.date.issued2020
dc.description.abstractUltra-high concentrator photovoltaic systems (UHCPV), usually referred to CPV systems exceeding 1000 suns, are signalled as one of the most promising research avenues to produce a new generation of high-efficiency and low-cost CPV systems. However, the structure of current concentrator solar cells prevents their development due to the unavoidable series resistance losses at such elevated concentration ratios. In this work, we investigate the performance of the so-called vertical-tunnel-junction (VTJ), recently introduced by the authors, by using advance TCAD. In particular, we carry out an optimisation procedure of the key parameters that affect its performance and conduct a deep investigation of the impact of the main recombination mechanisms and of sun concentration up to 10,000 suns. The results indicate that the performance of the novel structure is not significantly affected by these two factors. A record efficiency of 32.2% at 10,000 suns has been found. This represents a promising way to obtain state-of-the-art efficiencies above 30% for single-band-gap cells, and offers a new route towards the development of competitive CPV systems operating at ultra-high concentration fluxesgl
dc.description.peerreviewedSIgl
dc.description.sponsorshipE. F. Fernández and F. Almonacid thank the Spanish Economy Ministry and FEDER funds received under the project ENE2016-78251-R. N. Seoane and A. J. García Loureiro thank Spanish Ministry of Economy and Competitiveness and FEDER funds (TIN2016-76373-P) and the Xunta de Galicia and FEDER funds (GRC 2014/008). N. Seoane and E.F. Fernández also thank the Spanish Ministry of Science, Innovation and Universities (RYC-2017-23312, RYC-2017-21910). C. Outes also thanks the Ayudas predoctorales para la Formación de Personal Investigador con cargo a la Acción 9.a) del Plan de Apoyo a la Investigación de la Universidad de Jaén (ERC_2019_1)gl
dc.identifier.citationSolar Energy, Volume 203, June 2020, Pages 136-144gl
dc.identifier.doi10.1016/j.solener.2020.04.029
dc.identifier.issn0038-092X
dc.identifier.urihttp://hdl.handle.net/10347/24652
dc.language.isoenggl
dc.publisherElseviergl
dc.relation.projectIDinfo:eu-repo/grantAgreement/MINECO/Plan Estatal de Investigación Científica y Técnica y de Innovación 2013-2016/TIN2016-76373-P/ES
dc.relation.publisherversionhttps://doi.org/10.1016/j.solener.2020.04.029gl
dc.rights© 2020 International Solar Energy Society. Published by Elsevier Ltd. This manuscript version is made available under the CC-BY-NC-ND 4.0 license (http:// creativecommons.org/licenses/by-nc-nd/4.0/)gl
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 Internacional
dc.rights.accessRightsopen accessgl
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/
dc.subjectVertical solar cellsgl
dc.subjectSeries resistancegl
dc.subjectGallium arsenide (GaAs)gl
dc.subjectTunnel diodegl
dc.subjectConcentrator photovoltaicsgl
dc.titleNumerical optimisation and recombination effects on the vertical-tunnel-junction (VTJ) GaAs solar cell up to 10,000 sunsgl
dc.typejournal articlegl
dc.type.hasVersionAMgl
dspace.entity.typePublication
relation.isAuthorOfPublication6dd65e85-2624-4c4a-8d0d-593fa4dd51b3
relation.isAuthorOfPublication7c94bda5-3924-4484-9121-f327b8d2962c
relation.isAuthorOfPublication.latestForDiscovery6dd65e85-2624-4c4a-8d0d-593fa4dd51b3

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