Vertical-Tunnel-Junction (VTJ) Solar Cell for Ultra-High Light Concentrations (>2000 Suns)

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dc.contributor.affiliationUniversidade de Santiago de Compostela. Centro de Investigación en Tecnoloxías da Informacióngl
dc.contributor.affiliationUniversidade de Santiago de Compostela. Departamento de Electrónica e Computacióngl
dc.contributor.areaÁrea de Enxeñaría e Arquitectura
dc.contributor.authorFernández, Eduardo F.
dc.contributor.authorSeoane Iglesias, Natalia
dc.contributor.authorAlmonacid, Florencia
dc.contributor.authorGarcía Loureiro, Antonio Jesús
dc.date.accessioned2021-03-05T11:52:23Z
dc.date.available2021-03-05T11:52:23Z
dc.date.issued2019
dc.description.abstractA novel architecture of cell structure tailored to ultra-high (>2000 suns) concentration ratios is proposed. The basic solar cell consists of two p-n junctions connected in series by a highly doped tunnel diode with the metallic contacts located laterally. The tunneling connection allows using direct band-gap semiconductor compounds aiming to optimize the absorption of the spectrum. The performance of the novel architecture is investigated up to ultra-high concentration using TCAD software. Simulations show its viability for developing a new generation of solar cells to increase the potential in terms of efficiency and cost reduction of ultra-high concentrator systems. The solar cell does not show any degradation with concentration and efficiency as high as 28.4% at 15000 suns has been obtained for a preliminary designgl
dc.description.peerreviewedSIgl
dc.description.sponsorshipThe work of E. F. Fernández and F. Almonacid was supported by the Spanish Economy Ministry and FEDER funds under Project ENE2016-78251-R. The work of N. Seoane and A. J. García-Loureiro was supported in part by the Spanish Ministry of Economy and Competitiveness and FEDER funds under Grants TEC2014-59402-JIN and TIN2016-76373-P and in part by the Xunta de Galicia and FEDER funds under Grant GRC 2014/008gl
dc.identifier.citationEduardo F. Fernández, Natalia Seoane, Florencia Almonacid and Antonio J. García-Loureiro (2019) Vertical-Tunnel-Junction (VTJ) Solar Cell for Ultra-High Light Concentrations (>2000 Suns). IEEE Electron Device Letters, 40 (1), 44-47. Doi: 10.1109/LED.2018.2880240gl
dc.identifier.doi10.1109/LED.2018.2880240
dc.identifier.essn1558-0563
dc.identifier.issn0741-3106
dc.identifier.urihttp://hdl.handle.net/10347/24653
dc.language.isoenggl
dc.publisherIEEEgl
dc.relation.projectIDinfo:eu-repo/grantAgreement/MINECO/Plan Estatal de Investigación Científica y Técnica y de Innovación 2013-2016/TEC2014-59402-JIN/ES/ESCALADO Y VARIABILIDAD DE TRANSISTORES TUNEL DE EFECTO CAMPO 3D BASADOS EN NANOHILOS USANDO SI, GE Y MATERIALES III-V
dc.relation.projectIDinfo:eu-repo/grantAgreement/MINECO/Plan Estatal de Investigación Científica y Técnica y de Innovación 2013-2016/TIN2016-76373-P/ES/
dc.relation.publisherversionhttps://doi.org/10.1109/LED.2018.2880240gl
dc.rights© 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other worksgl
dc.rights.accessRightsopen accessgl
dc.subjectVertical solar cellsgl
dc.subjectConcentrator photovoltaicsgl
dc.subjectGallium arsenide (GaAs)gl
dc.subjectTunnel diodegl
dc.subjectSeries resistancegl
dc.titleVertical-Tunnel-Junction (VTJ) Solar Cell for Ultra-High Light Concentrations (>2000 Suns)gl
dc.typejournal articlegl
dc.type.hasVersionVoRgl
dspace.entity.typePublication
relation.isAuthorOfPublication6dd65e85-2624-4c4a-8d0d-593fa4dd51b3
relation.isAuthorOfPublication7c94bda5-3924-4484-9121-f327b8d2962c
relation.isAuthorOfPublication.latestForDiscovery6dd65e85-2624-4c4a-8d0d-593fa4dd51b3

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